PART |
Description |
Maker |
LH534B00 LH534B00T |
CMOS 4M(512K X 8) Mask-Programmable ROM CMOS 4M (512K x 8) MROM
|
Sharp Electrionic Components Sharp Corporation
|
LH534A00 LH534A00T |
CMOS 4M(512K X 8) Mask-Programmable ROM CMOS 4M (512K x 8) MROM Lens Cap; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
Sharp Electrionic Components Sharp Corporation
|
AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位)的CMOS存储 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位)的CMOS存储 Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位)的CMOS存储 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32 8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32 8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位)的CMOS存储 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32 MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM(为512k字16 100万字× 8位的CMOS静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压,超低功耗的CMOS静态RAM 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
MX29LV040CTC-55R MX29LV040CTI-55R |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
LE25FU406B ENA1066A LE25FU406BFN |
CMOS IC 4M-bit (512K×8) Serial Flash Memory 512K X 8 FLASH 2.7V PROM, DSO8
|
Sanyo Semicon Device
|
W39V040AP W39V040AQ |
512K 8 CMOS FLASH MEMORY WITH LPC INTERFACE 512K X 8 FLASH 3.3V PROM, 11 ns, PDSO32
|
Winbond Electronics Corp Winbond Electronics, Corp.
|
AS7C4096 AS7C34096-15JC AS7C34096-10JC AS7C34096-1 |
5V/3.3V 512K X8 CMOS SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36 High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-TSSOP -55 to 125 512K X 8 STANDARD SRAM, 20 ns, PDSO44 High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-TSSOP -55 to 125 512K X 8 STANDARD SRAM, 20 ns, PDSO36 Dual 4-Input Positive-AND Gate 14-TVSOP -40 to 85 512K X 8 STANDARD SRAM, 12 ns, PDSO44 Dual 4-Input Positive-AND Gate 14-SOIC -40 to 85 512K X 8 STANDARD SRAM, 12 ns, PDSO36 TV 12C 8#20 4#16 SKT PLUG 512K X 8 STANDARD SRAM, 10 ns, PDSO36 Dual 4-Input Positive-AND Gate 14-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO44 DUAL MONOSTABLE MULTIVIBRATORS 16-SOIC -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO44 Dual 4-Input Positive-AND Gate 14-SO -40 to 85 512K X 8 STANDARD SRAM, 15 ns, PDSO36 Dual 4-Input Positive-AND Gate 14-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 15 ns, PDSO44 TV 26C 26#20 PIN WALL RECP 512K X 8 STANDARD SRAM, 10 ns, PDSO44 TV 5C 5#16 PIN WALL RECP SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
W29C040T-12 W29C040T-90B W29C040T-12B W29C040P-12 |
512K X 8 CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Winbond Electronics, Corp.
|
AS6WA5128 |
3.0V to 3.6V 512K × 8 Intelliwatt low-power CMOS SRAM(3.0V 3.6V 512K × 8 Intelliwatt 低功CMOS 静态RAM) 3.0V to 3.6V 512K 】 8 Intelliwatt low-power CMOS SRAM 3.0V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|